香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 7?> 1347-1349

PAPERS

Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD

Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song and Chen Chen

+ Author Affiliations

PDF

Abstract: 4H-SiC films were grown on 75mm Si-face n-type substrates 4° off-oriented towards the 〈1120〉 direction using a horizontal hot-wall CVD system.Optical and atomic force microscopy results revealed the main defects observed were typical 4° off-large carrots,triangles,and a few down-falls.The most observable feature was the step bunching.By optimizing the process conditions,a low sigma/mean(σ/mean) value of 4.37% and 1.81% in doping concentration and thickness uniformity were obtained on the epitaxy films,respectively.

Key words: horizontal hot-wall CVD, 4H-SiC, homoepitaxy, uniformity

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3820 Times PDF downloads: 1426 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 14 December 2007 Online: Published: 01 July 2008

    Catalog

      Email This Article

      User name:
      Email:*請(qǐng)輸入正確郵箱
      Code:*驗(yàn)證碼錯(cuò)誤
      Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song, Chen Chen. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. Journal of Semiconductors, 2008, 29(7): 1347-1349. ****Li Z Y, Dong X, Zhang L, Chen G, Bai S, Chen C. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. J. Semicond., 2008, 29(7): 1347.
      Citation:
      Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song, Chen Chen. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. Journal of Semiconductors, 2008, 29(7): 1347-1349. ****
      Li Z Y, Dong X, Zhang L, Chen G, Bai S, Chen C. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. J. Semicond., 2008, 29(7): 1347.

      Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-13
      • Revised Date: 2007-12-14
      • Published Date: 2008-08-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return