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J. Semicond. > 2008, Volume 29?>?Issue 4?> 650-654

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OTFT with Bilayer Gate Insulator and Modificative Electrode

Bai Yu, Khizar-ul-Haq, M.A.Khan, Jiang Xueyin and Zhang Zhilin

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Abstract: An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/Al electrode configuration between gate insulator and source/drain electrodes has been investigated.A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine(CuPc) is used as an active layer.This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility,reduces the threshold voltage,and improves the on/off ratio simultaneously.The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage.Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.

Key words: organic thin film transistor, modified electrode, bilayer insulator, mobility

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    Received: 18 August 2015 Revised: 04 December 2007 Online: Published: 01 April 2008

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      Bai Yu, Khizar-ul-Haq, M.A.Khan, Jiang Xueyin, Zhang Zhilin. OTFT with Bilayer Gate Insulator and Modificative Electrode[J]. Journal of Semiconductors, 2008, 29(4): 650-654. ****Bai Y, Khizar-ul-Haq, M.A.Khan, Jiang X Y, Zhang Z L. OTFT with Bilayer Gate Insulator and Modificative Electrode[J]. J. Semicond., 2008, 29(4): 650.
      Citation:
      Bai Yu, Khizar-ul-Haq, M.A.Khan, Jiang Xueyin, Zhang Zhilin. OTFT with Bilayer Gate Insulator and Modificative Electrode[J]. Journal of Semiconductors, 2008, 29(4): 650-654. ****
      Bai Y, Khizar-ul-Haq, M.A.Khan, Jiang X Y, Zhang Z L. OTFT with Bilayer Gate Insulator and Modificative Electrode[J]. J. Semicond., 2008, 29(4): 650.

      OTFT with Bilayer Gate Insulator and Modificative Electrode

      • Department of Materials Science,Shanghai University,Jiading Campus,Shanghai 201800, China

      • Department of Materials Science,Shanghai University,Jiading Campus,Shanghai 201800, China

      • Department of Materials Science,Shanghai University,Jiading Campus,Shanghai 201800, China

      • Department of Materials Science,Shanghai University,Jiading Campus,Shanghai 201800, China

      • Key Laboratory of Advanced Display and System Application,Ministry of Education,Shanghai University,Shanghai 200072,China

      Funds:

      國家自然科學(xué)基金

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-26
      • Revised Date: 2007-12-04
      • Published Date: 2008-04-03

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