Chin. J. Semicond. > 2007, Volume 28?>?Issue 7?> 1130-1133

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Fabrication of Hybrid Sol-Gel SiO2 Optical Waveguide Devices by UV-Light Imprinting

Wang Yue, Wu Yuanda, Li Jianguang, An Junming, Wang Hongjie, Yin Xiaojie, Zhang Jiashun and Hu Xiongwei

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Abstract: Photosensitive sol-gel SiO2 materials were synthesized by the organic-inorganic hybrid method,and were spun on silicon substrate.The effects of UV-light exposure time and the postbake temperature and time on the refractive index and depth of the films were investigated.1×2 and 1×4 MMI splitters were fabricated by means of UV-light imprinting technology,and good mode profiles were measured.

Key words: sol-gel, UV-light imprinting, hybridization, optical waveguide

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    Received: 18 August 2015 Revised: 05 March 2007 Online: Published: 01 July 2007

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      Wang Yue, Wu Yuanda, Li Jianguang, An Junming, Wang Hongjie, Yin Xiaojie, Zhang Jiashun, Hu Xiongwei. Fabrication of Hybrid Sol-Gel SiO2 Optical Waveguide Devices by UV-Light Imprinting[J]. Journal of Semiconductors, 2007, 28(7): 1130-1133. ****Wang Y, Wu Yuanda, Li J G, An J M, Wang H J, Yin X J, Zhang J S, Hu X W. Fabrication of Hybrid Sol-Gel SiO2 Optical Waveguide Devices by UV-Light Imprinting[J]. Chin. J. Semicond., 2007, 28(7): 1130.
      Citation:
      Wang Yue, Wu Yuanda, Li Jianguang, An Junming, Wang Hongjie, Yin Xiaojie, Zhang Jiashun, Hu Xiongwei. Fabrication of Hybrid Sol-Gel SiO2 Optical Waveguide Devices by UV-Light Imprinting[J]. Journal of Semiconductors, 2007, 28(7): 1130-1133. ****
      Wang Y, Wu Yuanda, Li J G, An J M, Wang H J, Yin X J, Zhang J S, Hu X W. Fabrication of Hybrid Sol-Gel SiO2 Optical Waveguide Devices by UV-Light Imprinting[J]. Chin. J. Semicond., 2007, 28(7): 1130.

      Fabrication of Hybrid Sol-Gel SiO2 Optical Waveguide Devices by UV-Light Imprinting

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • R & D Center of Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-17
      • Revised Date: 2007-03-05
      • Published Date: 2007-07-05

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