Chin. J. Semicond. > 2007, Volume 28?>?Issue 3?> 317-322

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Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique

Zhang Jianjun, Hu Zengxin, Gu Shibin, Zhao Ying and Geng Xinhua

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Abstract: An optimized condition for defect passivation by the hot-wire technique was established.Effects of hydrogenation for polycrystalline SiGe (poly-Si1-xGex) thin films were estimated by investigating the dark conductivity and activation energy that derive from the conductivity as a function of the temperature.The results show that this technique can effectively reduce defects present in poly-Si1-xGex films.By optimizing the substrate and filament temperatures,the treatment can be accomplished in a short time of 20～30min,which is considerably shorter than other hydrogenation techniques.

Key words: hot-wire, hydrogenation, polycrystalline SiGe

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    Received: 18 August 2015 Revised: 17 October 2006 Online: Published: 01 March 2007

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      Zhang Jianjun, Hu Zengxin, Gu Shibin, Zhao Ying, Geng Xinhua. Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique[J]. Journal of Semiconductors, 2007, 28(3): 317-322. ****Zhang J J, Hu Z X, Gu S B, Zhao Y, Geng X H. Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique[J]. Chin. J. Semicond., 2007, 28(3): 317.
      Citation:
      Zhang Jianjun, Hu Zengxin, Gu Shibin, Zhao Ying, Geng Xinhua. Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique[J]. Journal of Semiconductors, 2007, 28(3): 317-322. ****
      Zhang J J, Hu Z X, Gu S B, Zhao Y, Geng X H. Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique[J]. Chin. J. Semicond., 2007, 28(3): 317.

      Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique

      • Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,ChinaElectronics,Nankai University,Tianjin 300071,China

      • Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,ChinaElectronics,Nankai University,Tianjin 300071,China

      • Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

      • Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

      • Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-23
      • Revised Date: 2006-10-17
      • Published Date: 2007-03-06

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