Abstract: On the basis of combining the advantages of low dose separation by implanted oxygen (SIMOX) technology and bonding technology,a new technology named SIMOX wafer bonding (SWB) for fabricating a thin film(thin top silicon layer)/thick buried oxide (BOX) SOI was investigated.A thin film/thick BOX SOI with SOI layer thickness of 130nm,BOX thickness of 1μm,and SOI layer thickness uniformity of ±2% was fabricated with SWB technology.The surface morphology and structure of the thin film/thick BOX SOI were characterized using cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy (AFM),respectively.The results suggest that the SOI layer of SWB can maintain the thickness uniformity of SIMOX and SWB SOI have an atomic scale SOI layer/BOX interface.Therefore,SWB is a promising technology for fabricating SOI material.

Key words: thin film/thick BOX SOI, SIMOX wafer bonding technology, XTEM