Abstract: A simulation model based on Metropolis Monte Carlo for anisotropic etching is presented.The step flow model of kink propagation is introduced in the modeling process of the simulation.For the calculation of the transaction probability of the Monte Carlo method,the removal probability function is set forth by using the nearest-neighbor bond-counting model.The simulation is carried out on different vicinal surfaces to verify the efficiency of the model.Through understanding the kink propagation,the velocity of high Miller-index facets can be explained.Compared with reported CA and other Monte Carlo methods,this model shows higher efficiency and accuracy in simulation.Finally,compensation for convex corners of the micro accelerometer is performed,and the visualization result of simulation agrees well with the experimental results.

Key words: Metropolis Mont Carlo, single crystal silicon, anisotropic, wet chemical etching