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J. Semicond. > 2008, Volume 29?>?Issue 8?> 1487-1490

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Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT

Li Ming, Zhang Haiying, Xu Jingbo, Li Xiao, Liu Liang and Fu Xiaojun

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Abstract: For enhancement-mode InGaP/AlGaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au.Comparison is made after thermal annealing and an optimum annealing process is obtained.Using the structure of Ti/Pt/Au,about a 200mV positive shift of threshold voltage is achieved by thermal annealing at 320℃ for 40min in N2 ambient.Finally,a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage

Key words: enhancement-mode,  InGaP/AlGaAs/InGaAs PHEMT,  anneal,  threshold voltage

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    Received: 18 August 2015 Revised: 19 March 2008 Online: Published: 01 August 2008

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      Li Ming, Zhang Haiying, Xu Jingbo, Li Xiao, Liu Liang, Fu Xiaojun. Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT[J]. Journal of Semiconductors, 2008, 29(8): 1487-1490. ****Li M, Zhang H Y, Xu J B, Li X, Liu L, Fu X J. Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT[J]. J. Semicond., 2008, 29(8): 1487.
      Citation:
      Li Ming, Zhang Haiying, Xu Jingbo, Li Xiao, Liu Liang, Fu Xiaojun. Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT[J]. Journal of Semiconductors, 2008, 29(8): 1487-1490. ****
      Li M, Zhang H Y, Xu J B, Li X, Liu L, Fu X J. Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT[J]. J. Semicond., 2008, 29(8): 1487.

      Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      Funds:

      the National Natural Science Foundation of China (No.60276021)

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-14
      • Revised Date: 2008-03-19
      • Published Date: 2008-08-02

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