香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 9?> 1779-1782

PAPERS

Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal

Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji and Gao Yongliang

+ Author Affiliations

PDF

Abstract: Using the laser scattering method to measure a polished GaAs wafer,we find that there are four aggregation centers of arsenide precipitation in a GaAs crystal grown in a special thermal field［1］ and the aggregation centers are at precisely the positions where the dislocation density is at a minimum.In this article,we examine the correlation between the precipitation distribution of arsenide and the dislocations.We also explain what leads to the formation of the four arsenide precipitation aggregation centers and their special distribution.

Key words: gallium arsenide, LEC, arsenide precipitation, micro-defects, dislocation distribution

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3411 Times PDF downloads: 1516 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 28 March 2008 Online: Published: 01 September 2008

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji, Gao Yongliang. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. Journal of Semiconductors, 2008, 29(9): 1779-1782. ****Zhu R H, Zeng Y P, Bu J P, Hui F, Zheng H J, Zhao J, Gao Y L. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. J. Semicond., 2008, 29(9): 1779.
      Citation:
      Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji, Gao Yongliang. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. Journal of Semiconductors, 2008, 29(9): 1779-1782. ****
      Zhu R H, Zeng Y P, Bu J P, Hui F, Zheng H J, Zhao J, Gao Y L. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. J. Semicond., 2008, 29(9): 1779.

      Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-12-14
      • Revised Date: 2008-03-28
      • Published Date: 2008-09-03

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return