Chin. J. Semicond. > 1995, Volume 16?>?Issue 1?> 31-35

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1995

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      余慶選，彭瑞伍，勵翠云. MOCVD GaInP材料本底濃度及其摻Zn時組分的控制[J]. 半導體學報(英文版), 1995, 16(1): 31-35.
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      余慶選，彭瑞伍，勵翠云. MOCVD GaInP材料本底濃度及其摻Zn時組分的控制[J]. 半導體學報(英文版), 1995, 16(1): 31-35.

      • Received Date: 2015-08-19

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