Chin. J. Semicond. > 2007, Volume 28?>?Issue 6?> 947-950

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Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors

Zhou Jianjun, Jiang Ruolian, Ji Xiaoli, Xie Zili, Han Ping, Zhang Rong and Zheng Youdou

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Abstract: A 326～365nm AlxGa1-xN/GaN heterojunction pin photodetector is designed.Energy band diagrams of this structure with complete polarization and partial polarization and without polarization are obtained by self-consistent Schrodinger-Poisson calculation.Meanwhile,the photoelectric response spectrum of the photodetector is simulated.Using the energy band diagram and photoelectric response spectrum,the influence of the interface polarization effects on the photoelectric response of the photodetector is analyzed.

Key words: polarization effects, AlGaN/GaN heterojunction, pin photodetector

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    Received: 18 August 2015 Revised: 26 January 2007 Online: Published: 01 June 2007

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      Zhou Jianjun, Jiang Ruolian, Ji Xiaoli, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Journal of Semiconductors, 2007, 28(6): 947-950. ****Zhou J J, Jiang R L, Ji X L, Xie Z L, Han P, Zhang R, Zheng Y D. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Chin. J. Semicond., 2007, 28(6): 947.
      Citation:
      Zhou Jianjun, Jiang Ruolian, Ji Xiaoli, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Journal of Semiconductors, 2007, 28(6): 947-950. ****
      Zhou J J, Jiang R L, Ji X L, Xie Z L, Han P, Zhang R, Zheng Y D. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Chin. J. Semicond., 2007, 28(6): 947.

      Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-02
      • Revised Date: 2007-01-26
      • Published Date: 2007-05-30

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