香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 9?> 1692-1697

PAPERS

Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process

Liang Bin, Chen Shuming and Liu Biwei

+ Author Affiliations

PDF

Abstract: Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation.The impact of voltage,temperature,substrate concentration,and LET on SET is studied.Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly.Peak current and charge collection within 2ns decreases as temperature increases,and temperature has a stronger influence on SET currents than on total charge.Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs.Both peak current and total collection charge increases as LET increases.

Key words: charge collection, p-n junction, very deep sub-micro, 3D device simulation, radiation

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3245 Times PDF downloads: 1041 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 07 May 2008 Online: Published: 01 September 2008

    Catalog

      Email This Article

      User name:
      Email:*請(qǐng)輸入正確郵箱
      Code:*驗(yàn)證碼錯(cuò)誤
      Liang Bin, Chen Shuming, Liu Biwei. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. Journal of Semiconductors, 2008, 29(9): 1692-1697. ****Liang B, Chen S M, Liu B W. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. J. Semicond., 2008, 29(9): 1692.
      Citation:
      Liang Bin, Chen Shuming, Liu Biwei. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. Journal of Semiconductors, 2008, 29(9): 1692-1697. ****
      Liang B, Chen S M, Liu B W. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. J. Semicond., 2008, 29(9): 1692.

      Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process

      • Computer School,National University of Defense Technology,Changsha 410073,China

      • Computer School,National University of Defense Technology,Changsha 410073,China

      • Computer School,National University of Defense Technology,Changsha 410073,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-10
      • Revised Date: 2008-05-07
      • Published Date: 2008-09-03

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return