Chin. J. Semicond. > 2007, Volume 28?>?Issue 7?> 1117-1120

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CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding

Yu Lijuan, Zhao Hongquan, Du Yun, Li Jing and Huang Yongzhen

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Abstract: A 1.55μm InP-InGaAsP quantum-well laser was fabricated on Si substrate by low-temperature wafer bonding,which lases at room temperature with electrical pumping.The InP epitaxy was designed and grown by MOCVD,then bonded to Si wafer.Finally,the laser with ridge-waveguide and edge-emission was fabricated.This laser runs continuous-wave with a threshold current of 48mA (current density of 1.65kA/cm2),differential resistance of 5.8W at the threshold current,and a maximum output power of 15mW at 220mA.

Key words: Si-based laser, continuous-wave lasing, wafer bonding

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    Received: 18 August 2015 Revised: 01 March 2007 Online: Published: 01 July 2007

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      Yu Lijuan, Zhao Hongquan, Du Yun, Li Jing, Huang Yongzhen. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Journal of Semiconductors, 2007, 28(7): 1117-1120. ****Yu L J, Zhao H Q, Du Y, Li J, Huang Y Z. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Chin. J. Semicond., 2007, 28(7): 1117.
      Citation:
      Yu Lijuan, Zhao Hongquan, Du Yun, Li Jing, Huang Yongzhen. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Journal of Semiconductors, 2007, 28(7): 1117-1120. ****
      Yu L J, Zhao H Q, Du Y, Li J, Huang Y Z. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Chin. J. Semicond., 2007, 28(7): 1117.

      CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-12-08
      • Revised Date: 2007-03-01
      • Published Date: 2007-07-05

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