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J. Semicond. > 2008, Volume 29?>?Issue 4?> 765-769

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Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics

Liu Cheng, Cao Chunfang, Lao Yanfeng, Cao Meng and Wu Huizhen

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Abstract: 1.3μm surface-emitting electroluminescence (EL) device structures are fabricated.The electrically confined apertures are formed by ion implantation and thermal annealing technology.By studying electrical and optical characteristics of the device structure,we found that the optimized thermal annealing temperature is 450℃ when the ion implantation dose is 5E14cm-2.The resistance of the device structure linearly increases with the decrease of aperture diameters.EL spectra intensities are remarkably enhanced after the electrically confined aperture is formed.For instance,the intensity of the sample with 15μm aperture is 4 times that without aperture.Finally,the effects of the electrically confined aperture on the EL spectra of the structure are physically explained.

Key words: EL device structure,  electrical confined aperture,  ion implantation

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    Received: 18 August 2015 Revised: 04 November 2007 Online: Published: 01 April 2008

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      Liu Cheng, Cao Chunfang, Lao Yanfeng, Cao Meng, Wu Huizhen. Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics[J]. Journal of Semiconductors, 2008, 29(4): 765-769. ****Liu C, Cao C F, Lao Y F, Cao M, Wu H Z. Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics[J]. J. Semicond., 2008, 29(4): 765.
      Citation:
      Liu Cheng, Cao Chunfang, Lao Yanfeng, Cao Meng, Wu Huizhen. Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics[J]. Journal of Semiconductors, 2008, 29(4): 765-769. ****
      Liu C, Cao C F, Lao Y F, Cao M, Wu H Z. Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics[J]. J. Semicond., 2008, 29(4): 765.

      Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Shanghai Institute of Space Power Sources, Shanghai 200233, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-14
      • Revised Date: 2007-11-04
      • Published Date: 2008-04-03

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