Abstract: With microelectronics plane technology,RF sputtering was used to deposit Mo to form a Schottky contact and electron beam evaporation was used to deposit Ni to form an ohmic contact in high vacuum ambient,and Mo/4H-SiC Schottky-barrier diodes were made in structures containing three-FLR.High-temperature annealing for the Mo contact is found to be effective in controlling the Schottky-barrier height at 1.2～1.3eV without degradation of the n-factor and reverse characteristics.A breakdown voltage of 3kV,a specific on resistance of 9.2mΩ·cm2, and a good V2b／Ron value of 978MW／cm2 for Mo/4H-SiC Schottky-barrier diodes are obtained experimentally.

Key words: SiC, Mo, Schottky barrier diode