Chin. J. Semicond. > 2007, Volume 28?>?Issue 6?> 909-912

PAPERS

Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy

Yin Zhijun, Zhong Fei, Qiu Kai, Li Xinhua and Wang Yuqi

+ Author Affiliations

PDF

Abstract: GaN thin films with mixed-polarity were initially grown on (0001) sapphire substrates by molecular beam epitaxy (MBE).The samples were etched by alkali solution,and porous GaN films were formed.GaN thick films were grown on the porous GaN layers by hydride vapor phase epitaxy (HVPE).These HVPE-GaN epilayers were characterized by atomic force microscopy,X-ray diffraction,and photoluminescence spectroscopy.The results indicate that the crystalline quality of HVPE-GaN is improved by using the porous GaN buffer,as the stress is reduced markedly.

Key words: GaN, mixed-polar, porous, stress relaxation

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3341 Times PDF downloads: 1127 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 09 January 2007 Online: Published: 01 June 2007

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Yin Zhijun, Zhong Fei, Qiu Kai, Li Xinhua, Wang Yuqi. Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2007, 28(6): 909-912. ****Yin Z J, Zhong F, Qiu K, Li X H, Wang Y Q. Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy[J]. Chin. J. Semicond., 2007, 28(6): 909.
      Citation:
      Yin Zhijun, Zhong Fei, Qiu Kai, Li Xinhua, Wang Yuqi. Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2007, 28(6): 909-912. ****
      Yin Z J, Zhong F, Qiu K, Li X H, Wang Y Q. Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy[J]. Chin. J. Semicond., 2007, 28(6): 909.

      Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy

      • Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China

      • Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China

      • Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China

      • Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China

      • Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-15
      • Revised Date: 2007-01-09
      • Published Date: 2007-05-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return