Abstract: The performance of a microwave monolithic integrated circuit (MMIC) amplifier with high output power in the Ka-band is presented.Using 75mm 0.25μm GaAs PHEMT technology provided by the Hebei Semiconductor Research Institute,this three-stage power amplifier,with a chip size of 19.25mm2(3.5mm×5.5mm),on 100μm GaAs substrate achieves a linear gain of more than 16dB in the 32.5～35.5GHz frequency range,with an average output power at 1dB gain compression of P1dB=29.8dBm and a maximum saturated output power of Psat=31dBm.

Key words: Ka-band, power amplifier, PHEMT, MMIC