香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 8?> 1475-1478

PAPERS

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi and Hu Xiaodong

+ Author Affiliations

PDF

Abstract: p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.The hole concentration first increased and then decreased with the magnesium flow rate while the mobility decreased monotonously.The optimum sample reached a hole concentration of 4.1E17cm-3 and a resistivity of 1Ω·cm.Based on a self-compensation model involving the deep donor MGaVN,we calculate the hole concentration as a function of magnesium doping concentration NA,which indicates that the self-compensation coefficient increases with NA;the hole concentration first increases with NA and reaches a maximum at NA≈4E19,then decreases rapidly as doping concentration increases.XRD also indicate that dislocation density decreased as magnesium flow rate decreased.

Key words: p-GaN, self-compensation, magnesium doping, MOCVD

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3903 Times PDF downloads: 1203 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 24 December 2007 Online: Published: 01 August 2008

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi, Hu Xiaodong. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. Journal of Semiconductors, 2008, 29(8): 1475-1478. ****Zhang X M, Wang Y J, Yang Z W, Liao H, Chen W H, Li D, Li R, Yang Z J, Zhang G Y, Hu X D. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. J. Semicond., 2008, 29(8): 1475.
      Citation:
      Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi, Hu Xiaodong. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. Journal of Semiconductors, 2008, 29(8): 1475-1478. ****
      Zhang X M, Wang Y J, Yang Z W, Liao H, Chen W H, Li D, Li R, Yang Z J, Zhang G Y, Hu X D. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. J. Semicond., 2008, 29(8): 1475.

      Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-02
      • Revised Date: 2007-12-24
      • Published Date: 2008-08-02

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return