Abstract: A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed.The model parameters are extracted with high precision,mainly based on analytical methods.The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are frequency independent.The validity of the proposed model has been demonstrated by a fabricated monolithic stacked transformer in TSMC's 0.13μm mixed-signal (MS)/RF CMOS process.

Key words: high-k, stacked on-chip transformer, frequency-independent, equivalent circuit