Chin. J. Semicond. > 1994, Volume 15?>?Issue 8?> 518-523

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    Received: 18 August 2015 Revised: Online: Published: 01 August 1994

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      金高龍，陳維德，許振嘉. CoSi2可望成為GaAs MESFET自對準工藝中的柵極材料[J]. 半導體學報(英文版), 1994, 15(8): 518-523.
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      金高龍，陳維德，許振嘉. CoSi2可望成為GaAs MESFET自對準工藝中的柵極材料[J]. 半導體學報(英文版), 1994, 15(8): 518-523.

      • Received Date: 2015-08-18

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