Abstract: Modeling analysis of thin fully depleted SOICMOS technology has been done.Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K,and the whole circuit of a laser range finder was simulated with Verilog software.By wafer processing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed.The simulated results agree with the test results.The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed,which can be applied in laser range finding.By manufacturing this device,further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.

Key words: silicon on insulator, high temperature characteristics, transistor, thin fully depleted