Chin. J. Semicond. > 2007, Volume 28?>?Issue 3?> 323-326

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Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials

Yang Hui, Zhang Enxia and Zhang Zhengxuan

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Abstract: To improve the total-dose radiation hardness,silicon-on-insulator (SOI) wafers fabricated by the separation-by-implanted-oxygen (SIMOX) method are modified by Si ion implantation into the buried oxide with a post anneal.The ID-VG characteristics can be tested with the pseudo-MOSFET method before and after radiation.The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials.

Key words: SIMOX,  SOI,  Si ion implantation,  total-dose radiation effect,  pseudo-MOS

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    Received: 18 August 2015 Revised: 03 November 2006 Online: Published: 01 March 2007

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      Yang Hui, Zhang Enxia, Zhang Zhengxuan. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Journal of Semiconductors, 2007, 28(3): 323-326. ****Yang H, Zhang E X, Zhang Z X. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Chin. J. Semicond., 2007, 28(3): 323.
      Citation:
      Yang Hui, Zhang Enxia, Zhang Zhengxuan. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Journal of Semiconductors, 2007, 28(3): 323-326. ****
      Yang H, Zhang E X, Zhang Z X. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Chin. J. Semicond., 2007, 28(3): 323.

      Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-18
      • Revised Date: 2006-11-03
      • Published Date: 2007-03-06

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