Chin. J. Semicond. > 1995, Volume 16?>?Issue 2?> 118-124

PDF

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2196 Times PDF downloads: 1129 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1995

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      朱南昌,陳京一,李潤射,許順生,周國良,張翔九,俞鳴人. 不同生長溫度下Ge_(0.5)Si_(0.5)/Si應變層超晶格材料結構的X射線雙晶衍射研究[J]. 半導體學報(英文版), 1995, 16(2): 118-124.
      Citation:
      朱南昌,陳京一,李潤射,許順生,周國良,張翔九,俞鳴人. 不同生長溫度下Ge_(0.5)Si_(0.5)/Si應變層超晶格材料結構的X射線雙晶衍射研究[J]. 半導體學報(英文版), 1995, 16(2): 118-124.

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return