Abstract: Sb-doped ZnO single crystal has been grown at 950℃ by the chemical vapor transport method.Compared to undoped ZnO,the Sb-doped ZnO single crystal is still n-type with an apparent increase of free electron concentration.X-ray photoelectron spectroscopy (XPS) measurement results suggest a possible occupation of the Zn site of the doped Sb in the ZnO single crystal,resulting in the formation of a donor.Blue emission is observed from the PL spectrum of the Sb doped ZnO single crystal,which is related with a shallow donor defect in ZnO.The results indicate that a high concentration of donor defects forms in ZnO after Sb doping at high temperature,making it difficult to obtain p-type material.

Key words: ZnO, single crystal, doping, defect