Chin. J. Semicond. > 2007, Volume 28?>?Issue 4?> 587-591

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5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End

Jiao Shilong, Chen Tangsheng, Qian Feng, Feng Ou, Jiang Youquan, Li Fuxiao, Shao Kai and Ye Yutang

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Abstract: An 850nm monolithically integrated optical receiver front end is developed with a 0.5μm GaAs PHEMT process,which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier.The photodetector has a photosensitive area and capacitance of 50μm×50μm and 0.17pF,respectively,as well as a dark current of less than 17nA under a bias of 4V.The distributed amplifier has a -3dB bandwidth close to 20GHz,with a transimpedance of 46dBΩ.In the range of 50MHz ~16GHz,both the input and output voltage standing wave ratio are less than 2.The measured noise figure varies form 3.03 to 6.5dB.The output eye diagrams for 2.5Gb/s and 5Gb/s NRZ pseudorandom binary sequence are also obtained.

Key words: metal-semiconductor-metal photodetector, distributed amplifier, optical receiver, eye diagram

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    Received: 18 August 2015 Revised: 28 November 2006 Online: Published: 01 April 2007

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      Jiao Shilong, Chen Tangsheng, Qian Feng, Feng Ou, Jiang Youquan, Li Fuxiao, Shao Kai, Ye Yutang. 5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End[J]. Journal of Semiconductors, 2007, 28(4): 587-591. ****Jiao S L, Chen T S, Qian F, Feng O, Jiang Y Q, Li F X, Shao K, Ye Y T. 5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End[J]. Chin. J. Semicond., 2007, 28(4): 587.
      Citation:
      Jiao Shilong, Chen Tangsheng, Qian Feng, Feng Ou, Jiang Youquan, Li Fuxiao, Shao Kai, Ye Yutang. 5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End[J]. Journal of Semiconductors, 2007, 28(4): 587-591. ****
      Jiao S L, Chen T S, Qian F, Feng O, Jiang Y Q, Li F X, Shao K, Ye Y T. 5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End[J]. Chin. J. Semicond., 2007, 28(4): 587.

      5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End

      • School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing 210016,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-10-11
      • Revised Date: 2006-11-28
      • Published Date: 2007-04-09

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