Chin. J. Semicond. > 2007, Volume 28?>?Issue 10?> 1568-1573

PAPERS

Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, Liao Xiuying, Wang Zhen, Zhou Yong and Liu Wanqing

+ Author Affiliations

PDF

Abstract: AlN layers were grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) at 1200℃,5kPa.Atomically flat epilayers were obtained at a low V/III flow ratio without nitridation on the substrate.Atomic force microscopy (AFM) reveals a roughness of around 0.44nm for the atomically flat layers with an FWHM of (0002) X-ray diffraction rocking curve around 166" .Analysis of the growth results demonstrates that the polarity of the AlN layer and vapor phase reaction between NH3 and the Al-precursor are the primary factors affecting the AlN surface morphology.High quality n-doped AlGaN layers with high Al content were obtained using the as-grown atomically flat AlN layers,implying the good quality of the layers as epitaxial template.

Key words: MOCVD, AlN, polarity, atomically flat

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4052 Times PDF downloads: 1874 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 24 May 2007 Online: Published: 01 October 2007

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, Liao Xiuying, Wang Zhen, Zhou Yong, Liu Wanqing. Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition[J]. Journal of Semiconductors, 2007, 28(10): 1568-1573. ****Zhao H, Zou Z Y, Zhao W B, Liu T, Yang X B, Liao X Y, Wang Z, Zhou Y, Liu W Q. Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition[J]. Chin. J. Semicond., 2007, 28(10): 1568.
      Citation:
      Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, Liao Xiuying, Wang Zhen, Zhou Yong, Liu Wanqing. Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition[J]. Journal of Semiconductors, 2007, 28(10): 1568-1573. ****
      Zhao H, Zou Z Y, Zhao W B, Liu T, Yang X B, Liao X Y, Wang Z, Zhou Y, Liu W Q. Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition[J]. Chin. J. Semicond., 2007, 28(10): 1568.

      Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Chongqing Opto-Electronics Research Institute,Chongqing 400060,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-04-04
      • Revised Date: 2007-05-24
      • Published Date: 2007-09-26

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return