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J. Semicond. > 2008, Volume 29?>?Issue 3?> 578-582

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Gain Characteristics of Er3+/Yb3+ Co-Doped Waveguide Amplifiers

Wang Yuhai, Ma Chunsheng, Li Delu and Zhang Daming

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Abstract: Novel formulas to analyze the gain characteristics of Er3+/Yb3+ co-doped waveguide amplifiers (EYCDWA) are derived from the rate equations and the light propagation equations under the uniform dopant and steady-state conditions,neglecting the amplified spontaneous emission and introducing initial energy transfer efficiency.Using these formulas,the effects of the pumping power,signal power,dopant concentration,and waveguide length on the gain characteristics of the EYCDWA are analyzed.A comparison is performed between the EYCDWA and the singly erbium-doped optical waveguide amplifier and some useful results are obtained.

Key words: waveguide amplifier, Er3+/Yb3+ co-dopant, rate equations, propagation equations, gain characteristic

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    Received: 18 August 2015 Revised: 04 October 2007 Online: Published: 01 March 2008

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      Wang Yuhai, Ma Chunsheng, Li Delu, Zhang Daming. Gain Characteristics of Er3+/Yb3+ Co-Doped Waveguide Amplifiers[J]. Journal of Semiconductors, 2008, 29(3): 578-582. ****Wang Y H, Ma C S, Li D L, Zhang D M. Gain Characteristics of Er3+/Yb3+ Co-Doped Waveguide Amplifiers[J]. J. Semicond., 2008, 29(3): 578.
      Citation:
      Wang Yuhai, Ma Chunsheng, Li Delu, Zhang Daming. Gain Characteristics of Er3+/Yb3+ Co-Doped Waveguide Amplifiers[J]. Journal of Semiconductors, 2008, 29(3): 578-582. ****
      Wang Y H, Ma C S, Li D L, Zhang D M. Gain Characteristics of Er3+/Yb3+ Co-Doped Waveguide Amplifiers[J]. J. Semicond., 2008, 29(3): 578.

      Gain Characteristics of Er3+/Yb3+ Co-Doped Waveguide Amplifiers

      • State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering, Jilin University,Changchun 130012,China

      • State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering, Jilin University,Changchun 130012,China

      • State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering, Jilin University,Changchun 130012,China

      • State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering, Jilin University,Changchun 130012,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-26
      • Revised Date: 2007-10-04
      • Published Date: 2008-02-28

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