Chin. J. Semicond. > 2007, Volume 28?>?Issue 4?> 496-499

PAPERS

A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, Yu Jinzhong and Wang Qiming

+ Author Affiliations

PDF

Abstract: A large area multi-finger configuration power SiGe HBT device (with an emitter area of about 880μm2) was fabricated with 2μm double-mesa technology.The maximum DC current gain β is 214.The BVCEO is up to 10V,and the BVCBO is up to 16V with a collector doping concentration of 1e17cm-3 and collector thickness of 400nm.The device exhibits a maximum oscillation frequency fmax of 19.3GHz and a cut-off frequency fT of 18.0GHz at a DC bias point of IC=30mA and VCE=3V.MSG (maximum stable gain) is 24.5dB,and U (Mason unilateral gain) is 26.6dB at 1GHz.Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.

Key words: SiGe, HBT, power, double-mesa technology, multi-finger

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3348 Times PDF downloads: 1742 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 20 November 2006 Online: Published: 01 April 2007

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, Yu Jinzhong, Wang Qiming. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Journal of Semiconductors, 2007, 28(4): 496-499. ****Xue C L, Shi W H, Yao F, Cheng B W, Wang H J, Yu J Z, Wang Q M. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Chin. J. Semicond., 2007, 28(4): 496.
      Citation:
      Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, Yu Jinzhong, Wang Qiming. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Journal of Semiconductors, 2007, 28(4): 496-499. ****
      Xue C L, Shi W H, Yao F, Cheng B W, Wang H J, Yu J Z, Wang Q M. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Chin. J. Semicond., 2007, 28(4): 496.

      A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-09-04
      • Revised Date: 2006-11-20
      • Published Date: 2007-04-09

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return