J. Semicond. > 2008, Volume 29?>?Issue 11?> 2143-2147

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Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation

Sun Ling, Liu Wei, Duan Zhenyong, Xu Zhongyi and Yang Huayue

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Abstract: MMT (modified magnetron typed) plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs (metal-oxide-semiconductor field effect transistors).Dual-peak and single-peak N distributions are formed after nitridation.The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility,and TDDB characteristics.The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated (ULSI) technology.

Key words: plasma nitridation, mobility, TDDB

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    Received: 18 August 2015 Revised: 15 July 2008 Online: Published: 01 November 2008

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      Sun Ling, Liu Wei, Duan Zhenyong, Xu Zhongyi, Yang Huayue. Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (Journal of Semiconductors, 2008, 29(11): 2143-2147. ****Sun L, Liu W, Duan Z Y, Xu Z Y, Yang H Y. Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (J. Semicond., 2008, 29(11): 2143.
      Citation:
      Sun Ling, Liu Wei, Duan Zhenyong, Xu Zhongyi, Yang Huayue. Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation[J]. Journal of Semiconductors, 2008, 29(11): 2143-2147. ****
      Sun L, Liu W, Duan Z Y, Xu Z Y, Yang H Y. Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (J. Semicond., 2008, 29(11): 2143.

      Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,Chin

      • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China

      • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-03-10
      • Revised Date: 2008-07-15
      • Published Date: 2008-11-11

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