Abstract: The influence of pretreatment on the thermal donors (TD) in neutron-irradiated Czochralski silicon is investigated with four-point probe measurement and Fourier transform infrared spectrometry.The results show that the amount and the generation rate of the thermal donors are depressed after preheating treatment at 650℃.After rapid thermal processing at 1200℃ in N2 atmosphere,the number of the donors is depressed in irradiated silicon; but in Ar atmosphere,the number of the donors is depressed in non-irradiated silicon.

Key words: neutron irradiation,  thermal donor,  Czochralski silicon,  irradiated defect