Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 2006-2010

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Fabrication of High-Density Transmission Gratings for X-Ray Diffraction

Zhu Xiaoli, Ma Jie, Cao Leifeng, Yang Jiamin, Xie Changqing, Liu Ming, Chen Baoqin, Niu Jiebin, Zhang Qingzhao, Jiang Ji, Zhao Min and Ye Tianchun

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Abstract: Large area transmission gratings (TG) for soft X-ray diffraction,with an area of 10mm×0.5mm,a period of 500nm,a line-space ratio of 1∶1,and a gold thickness of 430nm,are successfully fabricated by combining electron beam lithography (EBL),X-ray lithography (XRL),and electroplating.In the processes,the mask of TG with well-defined three dimensional relief structures is originally patterned by EBL and then by electroplating.Next,the processes of XRL and electroplating allow us to efficiently and cost-effectively fabricate many copies of TG with the following two major advantages:high resolution and a vertical cross section.Moreover,the measurement of its efficiency has shown its perfect performance with respect to diffraction of EUV light.

Key words: transmission gratings, electron beam lithography, X-ray lithography, X-ray diffractive optical elements

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    Received: 18 August 2015 Revised: 24 July 2007 Online: Published: 01 December 2007

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      Zhu Xiaoli, Ma Jie, Cao Leifeng, Yang Jiamin, Xie Changqing, Liu Ming, Chen Baoqin, Niu Jiebin, Zhang Qingzhao, Jiang Ji, Zhao Min, Ye Tianchun. Fabrication of High-Density Transmission Gratings for X-Ray Diffraction[J]. Journal of Semiconductors, 2007, 28(12): 2006-2010. ****Zhu X L, Ma J, Cao L F, Yang J M, Xie C Q, Liu M, Chen B Q, Niu J B, Zhang Q Z, Jiang J, Zhao M, Ye T C. Fabrication of High-Density Transmission Gratings for X-Ray Diffraction[J]. Chin. J. Semicond., 2007, 28(12): 2006.
      Citation:
      Zhu Xiaoli, Ma Jie, Cao Leifeng, Yang Jiamin, Xie Changqing, Liu Ming, Chen Baoqin, Niu Jiebin, Zhang Qingzhao, Jiang Ji, Zhao Min, Ye Tianchun. Fabrication of High-Density Transmission Gratings for X-Ray Diffraction[J]. Journal of Semiconductors, 2007, 28(12): 2006-2010. ****
      Zhu X L, Ma J, Cao L F, Yang J M, Xie C Q, Liu M, Chen B Q, Niu J B, Zhang Q Z, Jiang J, Zhao M, Ye T C. Fabrication of High-Density Transmission Gratings for X-Ray Diffraction[J]. Chin. J. Semicond., 2007, 28(12): 2006.

      Fabrication of High-Density Transmission Gratings for X-Ray Diffraction

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • National Key Laboratory of Laser Fusion,Research Center of Laser Fusion,Chinese Academy of Engineering Physics,Mianyang 621900,China

      • National Key Laboratory of Laser Fusion,Research Center of Laser Fusion,Chinese Academy of Engineering Physics,Mianyang 621900,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-11
      • Revised Date: 2007-07-24
      • Published Date: 2007-11-28

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