Abstract: The large-signal modeling of a GaAs HFET/PHEMT is the key of designing a microwave integrated power amplifier.Through analyzing the modeling design,calibrating it on-wafer,and applying appropriate measurement techniques,we develop a modified charge conservation EEHEMT1 model.This is accomplished by using modified Cold FET measurement technology and adopting the testing technique on-wafer and combining it with narrow pulse testing technology.The experimental results agree closely with simulated results.

Key words: GaAs FET, MMIC, power device model, testing structure, accurate modeling