Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Liu Zongshun; Zhao Degang; Zhu Jianjun; Zhang Shuming; Duan Lihong; Wang Hai; Shi Yongsheng; Liu Wenbao; Zhang Shuang; Jiang Desheng; Yang Hui

Chin. J. Semicond. > 2007, Volume 28?>?Issue 4?> 592-596

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Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Liu Zongshun, Zhao Degang, Zhu Jianjun, Zhang Shuming, Duan Lihong, Wang Hai, Shi Yongsheng, Liu Wenbao, Zhang Shuang, Jiang Desheng and Yang Hui

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State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China

Abstract: Schottky barrier GaN ultraviolet detectors are fabricated with a very low reverse saturation current density of 5.5e-14A/cm2 and very large Schottky barrier height of 1.18eV.The spectral responsivity of the detector at 0V and reverse bias was measured.There are no significant changes in the responsivity at reverse bias voltage.The peak responsivity of the detector at 0V is 0.214A/W at a wavelength of 3582nm.The spatial photoresponse was measured by 359nm light beam scanning across the photosensitive area of the detector at 0V and -3V.The changes in the photoresponse are no more than 0.6% in the central portion of the photosensitive area at biases of 0V and -3V.The Schottky barrier height decreases with near-band-edge ultraviolet illumination,especially near the transparent Schottky contact and near the Schottky contact pad.The open circuit voltage of the detector with 368nm light illumination is less than that with both 368 and 810nm light illumination, but the photocurrent of the detector with 368nm light illumination is nearly equal to that with both 368 and 810nm light illumination at 0V. The variation in occupied trap concentration at the GaN surface is estimated to be 8.4e10 cm-2 by the difference of the open circuit voltage of the detector between cases of illumination with 368nm light and 368nm+810nm light.

Key words: Schottky barrier, ultraviolet detector, GaN, open circuit voltage, near-band-edge, surface states, 表面態

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Received: 18 August 2015 Revised: 29 November 2006 Online: Published: 01 April 2007

Schottky barrier GaN ultraviolet detectors are fabricated with a very low reverse saturation current density of 5.5e-14A/cm2 and very large Schottky barrier height of 1.18eV.The spectral responsivity of the detector at 0V and reverse bias was measured.There are no significant changes in the responsivity at reverse bias voltage.The peak responsivity of the detector at 0V is 0.214A/W at a wavelength of 3582nm.The spatial photoresponse was measured by 359nm light beam scanning across the photosensitive area of the detector at 0V and -3V.The changes in the photoresponse are no more than 0.6% in the central portion of the photosensitive area at biases of 0V and -3V.The Schottky barrier height decreases with near-band-edge ultraviolet illumination,especially near the transparent Schottky contact and near the Schottky contact pad.The open circuit voltage of the detector with 368nm light illumination is less than that with both 368 and 810nm light illumination, but the photocurrent of the detector with 368nm light illumination is nearly equal to that with both 368 and 810nm light illumination at 0V. The variation in occupied trap concentration at the GaN surface is estimated to be 8.4e10 cm-2 by the difference of the open circuit voltage of the detector between cases of illumination with 368nm light and 368nm+810nm light.

Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

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