Abstract: In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source.Two-dimensional analytical models of surface potential and threshold voltage for the novel SOI MOSFET are developed based on the explicit solution of the two-dimensional Poisson’s equation.Its characteristic improvement is investigated.It is concluded that the novel structure exhibits better suppression of drain-induced barrier lowering and higher carrier transport efficiency than conventional dual material gate SOI MOSFETs.Its drain-induced barrier lowering decreases with increasing halo doping concentration but does not change monotonically with halo length.The analytical models agree well with the two-dimensional device simulator MEDICI.

Key words: dual material gate, SOI, threshold voltage, analytical model