PAPERS
Feng Xiaoxing, Wang Xin’an, Feng Jun, Ge Binjie and Zhang Xing
Abstract: A novel parasitic auto-correction precision silicon temperature sensor in a 0.5μm CMOS process is presented.Simulation shows that its accuracy is within ±03℃ in the full military temperature range from -55 to 125℃ with just one point calibration at 300K.This result is achieved by canceling the base resistor of the CMOS substrate pnp transistors with two structures:three bias temperature sensors and a novel switch-capacitor Sigma-Delta ADC analog front end.The bias current and the emit area of pnp transistors are carefully chosen to avoid serious nonlinearity and a novel analog front end is controlled by four non-overlapping clocks to ease digital processing after ADC.
Key words: temperature sensor, error auto-correction, base resistor cancellation, CMOS substrate transistor
Article views: 3814 Times PDF downloads: 2530 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 11 August 2007 Online: Published: 01 December 2007
| Citation: |
Feng Xiaoxing, Wang Xin’an, Feng Jun, Ge Binjie, Zhang Xing. Silicon Temperature Sensor with Inaccuracy of ±0.3℃ from -55 to 125℃[J]. Journal of Semiconductors, 2007, 28(12): 1972-1978.
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Feng X X, Wang X, Feng J, Ge B J, Zhang X. Silicon Temperature Sensor with Inaccuracy of ±0.3℃ from -55 to 125℃[J]. Chin. J. Semicond., 2007, 28(12): 1972.
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