Abstract: Al-N codoped p-type Zn0.95Mg0.05O thin films were deposited on glass substrates by DC reactive manetron sputtering, N2O was used as the N doping source. The XRD patterns showed that the introduction of Mg and Al has no effect on the crystallinity of the films, the films all showed c-axis preferential orientation.A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 400 to 530℃.The lowest reliable room temperature resistivity was found to be 58.5Ω·cm,with a carrier concentration of 1.95e17cm-3 and a Hall mobility of 0.546cm2／(V·s).The p-type behavior is stable.The optical transmittance spectra reveal blue shift in optical bandgap for the p-type Zn0.95Mg0.05O comparing with that for pure ZnO,which confirms the effective incorporation of Mg.The band gap of alloy is controllable.

Key words: ZnMgO, p-type doping, thin films