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J. Semicond. > 2008, Volume 29?>?Issue 5?> 832-835

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GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches

Wu Rufei, Zhang Haiying, Yin Junjian, Zhang Jian, Liu Huidong and Liu Xunchun

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Abstract: GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented.The impact of diode physical characteristics and electrical parameters on switch performance is discussed.A new structure for GaAs PIN diodes is proposed and the fabrication process is described.GaAs PIN diodes with an on-state resistance of ＜2.2Ω and off-state capacitance ＜20fF in the range of 100MHz to 12.1GHz are obtained.

Key words: GaAs PIN diodes, low-loss, high-isolation, switch

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    Received: 18 August 2015 Revised: 19 December 2007 Online: Published: 01 May 2008

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      Wu Rufei, Zhang Haiying, Yin Junjian, Zhang Jian, Liu Huidong, Liu Xunchun. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. Journal of Semiconductors, 2008, 29(5): 832-835. ****Wu R F, Zhang H Y, Yin J J, Zhang J, Liu H D, Liu X C. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. J. Semicond., 2008, 29(5): 832.
      Citation:
      Wu Rufei, Zhang Haiying, Yin Junjian, Zhang Jian, Liu Huidong, Liu Xunchun. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. Journal of Semiconductors, 2008, 29(5): 832-835. ****
      Wu R F, Zhang H Y, Yin J J, Zhang J, Liu H D, Liu X C. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. J. Semicond., 2008, 29(5): 832.

      GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-21
      • Revised Date: 2007-12-19
      • Published Date: 2008-05-05

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