Chin. J. Semicond. > 2007, Volume 28?>?Issue 4?> 480-483

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A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications

Li Wenjun, Sun Lingling and Liu Jun

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Abstract: A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications.This novel device has good DC and RF characteristics.It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT=6GHz at DC bias of Vg=Vd=3.6V.At 1.5GHz,a power-added efficiency (PAE) of 50% is achieved with an output power of up to 27dBm from this device

Key words: patterned-SOI, LDMOSFET, SIMOX, RF power amplifier

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    Received: 18 August 2015 Revised: 09 November 2006 Online: Published: 01 April 2007

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      Li Wenjun, Sun Lingling, Liu Jun. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Journal of Semiconductors, 2007, 28(4): 480-483. ****Li W J, Sun L L, Liu J. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Chin. J. Semicond., 2007, 28(4): 480.
      Citation:
      Li Wenjun, Sun Lingling, Liu Jun. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Journal of Semiconductors, 2007, 28(4): 480-483. ****
      Li W J, Sun L L, Liu J. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Chin. J. Semicond., 2007, 28(4): 480.

      A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications

      • Microelectronic CAD Center,Hangzhou Dianzi University,Hangzhou 310018,China

      • Microelectronic CAD Center,Hangzhou Dianzi University,Hangzhou 310018,China

      • Microelectronic CAD Center,Hangzhou Dianzi University,Hangzhou 310018,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-10-27
      • Revised Date: 2006-11-09
      • Published Date: 2007-04-09

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