Abstract: Fundamental equations for an RSD are derived through semiconductor theory.By considering the high level injection and high electric field effects,a physical model of an RSD is constructed,in which the reverse injection process is under pnn+ diode operation and the forward conduction process is under pin diode operation.Through the limit difference method,the partial differential equation of the semiconductor device is transformed into a difference equation,and the corresponding boundary condition is discretized with high accuracy.Combined with a typical RSD circuit,the circuit equations are written,and the voltage-time and current-time waveforms are gotten by means of the Runge-Kutta algorithm and the non-equilibrium carrier distribution.By comparing an RSD discharge experiment and model computation,the difference between the theoretical results and the experimental results are analyzed.The practical value of the model and algorithm is shown through an application circuit.As a result,the physical model and the numerical algorithm are proved valid,which lead a predictive role for RSD device design and circuit simulation.

Key words: RSD, high-level injection, non-equilibrium carrier