Chin. J. Semicond. > 2007, Volume 28?>?Issue 7?> 1023-1029

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A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis

Cao Quanjun, Zhang Yimen, Zhang Yuming, Lü Hongliang, Guo Hui, Tang Xiaoyan and Wang Yuehu

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Abstract: A new comprehensive empirical large signal model for 4H-SiC MESFETs is proposed.An enhanced drain current model,along with an improved charge conservation capacitance model,is presented by the improvement of the channel length modulation and the hyperbolic tangent function coefficient based on the Materka model.The Levenberg-Marquardt method is used to optimize the parameter extraction.A comparison of simulation results with experimental data is made,and good agreements of I-V curves,Pout(output power),PAE (power added efficiency),and gain at the bias of VDS＝20V,IDS=80mA as well as the operational frequency of 1.8GHz are obtained.

Key words: 4H-SiC MESFET, large signal, empirical model, Levenberg-Marquardt method

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    Received: 18 August 2015 Revised: 01 February 2007 Online: Published: 01 July 2007

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      Cao Quanjun, Zhang Yimen, Zhang Yuming, Lü Hongliang, Guo Hui, Tang Xiaoyan, Wang Yuehu. A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis[J]. Journal of Semiconductors, 2007, 28(7): 1023-1029. ****Cao Q J, Zhang Y M, Zhang Y M, Lü H, Guo H, Tang X Y, Wang Y H. A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis[J]. Chin. J. Semicond., 2007, 28(7): 1023.
      Citation:
      Cao Quanjun, Zhang Yimen, Zhang Yuming, Lü Hongliang, Guo Hui, Tang Xiaoyan, Wang Yuehu. A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis[J]. Journal of Semiconductors, 2007, 28(7): 1023-1029. ****
      Cao Q J, Zhang Y M, Zhang Y M, Lü H, Guo H, Tang X Y, Wang Y H. A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis[J]. Chin. J. Semicond., 2007, 28(7): 1023.

      A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis

      • Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China

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      國家重點基礎研究發展計劃

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-04
      • Revised Date: 2007-02-01
      • Published Date: 2007-07-05

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