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J. Semicond. > 2008, Volume 29?>?Issue 6?> 1194-1197

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Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Wang Yong, Zhang Wendong and Zhang Xiongwen

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Abstract: Selective dry etching of GaAs/AlAs with SiCl4/SF6 mixtures by inductively coupled plasma (ICP) is reported.With different SiCl4/SF6 ratios,chamber pressure,and RF chuck power,the average etch rates of GaAs,AlAs,and their selectivity are studied.Proper gases ratios of SiCl4/SF6(15/5sccm),lower RF chuck power,and higher chamber pressure enhance the formation of AlF3 nonviolent produce and encourage to the selectivity of GaAs/AlAs.When the gases ratios of SiCl4/SF6 are at 15/5sccm,RF chuck power is 10W,source power is 500W,and chamber pressure is 2Pa,the selectivity of GaAs/AlAs reaches at least 1500.The plasma damage of etched GaAs substrate is conducted by Raman spectroscope under different RF chuck power and chamber pressure,atomic force microscope (AFM),and scanning electron microscope (SEM) also have been applied to view the surface morphology and sidewall,respectively.

Key words: GaAs/AlAs, ICP, selective dry etching, SiCl4/SF6

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    Received: 18 August 2015 Revised: 22 November 2007 Online: Published: 01 June 2008

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      Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Wang Yong, Zhang Wendong, Zhang Xiongwen. Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP[J]. Journal of Semiconductors, 2008, 29(6): 1194-1197. ****Tong Z M, Xue C Y, Zhang B Z, Wang Y, Zhang W D, Zhang X W. Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP[J]. J. Semicond., 2008, 29(6): 1194.
      Citation:
      Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Wang Yong, Zhang Wendong, Zhang Xiongwen. Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP[J]. Journal of Semiconductors, 2008, 29(6): 1194-1197. ****
      Tong Z M, Xue C Y, Zhang B Z, Wang Y, Zhang W D, Zhang X W. Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP[J]. J. Semicond., 2008, 29(6): 1194.

      Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051, China

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051, China

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051, China

      • The 13th Research Institute,China Electronics Technology Group Cooperation, Shijiazhuang 050000,China

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051, China

      • The 13th Research Institute,China Electronics Technology Group Cooperation, Shijiazhuang 050000,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-27
      • Revised Date: 2007-11-22
      • Published Date: 2008-06-05

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