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J. Semicond. > 2008, Volume 29?>?Issue 8?> 1453-1456

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Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures

Wang Liang, Zhao Yongmei, Ning Jin, Sun Guosheng, Wang Lei, Liu Xingfang, Zhao Wanshun, Zeng Yiping and Li Jinmin

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Abstract: Micromachined comb-drive electrostatic resonators with folded-cantilever beams were designed and fabricated.A combination of Rayleigh’s method and finite-element analysis was used to calculate the resonant frequency drift as we adjusted the device geometry and material parameters.Three micromachined lateral resonant resonators with different beam widths were fabricated.Their resonant frequencies were experimentally measured to be 64.5,147.2,and 2555kHz,respectively,which are in good agreement with the simulated resonant frequency.It is shown that an improved frequency performance could be obtained on the poly 3C-SiC based device structural material systems with high Young’s modulus.

Key words: lateral resonant device, folded-beam, comb structure, MEMS, resonator, silicon carbide

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    Received: 18 August 2015 Revised: 07 April 2008 Online: Published: 01 August 2008

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      Wang Liang, Zhao Yongmei, Ning Jin, Sun Guosheng, Wang Lei, Liu Xingfang, Zhao Wanshun, Zeng Yiping, Li Jinmin. Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures[J]. Journal of Semiconductors, 2008, 29(8): 1453-1456. ****Wang L, Zhao Y M, Ning J, Sun G S, Wang L, Liu X F, Zhao W S, Zeng Y P, Li J M. Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures[J]. J. Semicond., 2008, 29(8): 1453.
      Citation:
      Wang Liang, Zhao Yongmei, Ning Jin, Sun Guosheng, Wang Lei, Liu Xingfang, Zhao Wanshun, Zeng Yiping, Li Jinmin. Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures[J]. Journal of Semiconductors, 2008, 29(8): 1453-1456. ****
      Wang L, Zhao Y M, Ning J, Sun G S, Wang L, Liu X F, Zhao W S, Zeng Y P, Li J M. Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures[J]. J. Semicond., 2008, 29(8): 1453.

      Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Transducer Technology,Chinese Academy of Sciences,Beijing 100083,China

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Transducer Technology,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Transducer Technology,Chinese Academy of Sciences,Beijing 100083,China

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Transducer Technology,Chinese Academy of Sciences,Beijing 100083,China

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Transducer Technology,Chinese Academy of Sciences,Beijing 100083,China

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-02-23
      • Revised Date: 2008-04-07
      • Published Date: 2008-08-02

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