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J. Semicond. > 2008, Volume 29?>?Issue 6?> 1057-1061

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Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

Yang Xiang, Han Weihua, Wang Ying, Zhang Yang and Yang Fuhua

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Abstract: Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique.This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution.The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm.Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.

Key words: silicon nanostructure, anisotropic wet etching, electron-beam lithography

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    Received: 18 August 2015 Revised: 29 December 2007 Online: Published: 01 June 2008

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      Yang Xiang, Han Weihua, Wang Ying, Zhang Yang, Yang Fuhua. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. Journal of Semiconductors, 2008, 29(6): 1057-1061. ****Yang X, Han W H, Wang Y, Zhang Y, Yang F H. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. J. Semicond., 2008, 29(6): 1057.
      Citation:
      Yang Xiang, Han Weihua, Wang Ying, Zhang Yang, Yang Fuhua. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. Journal of Semiconductors, 2008, 29(6): 1057-1061. ****
      Yang X, Han W H, Wang Y, Zhang Y, Yang F H. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. J. Semicond., 2008, 29(6): 1057.

      Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

      • Research Center of Engineering for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Research Center of Engineering for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Research Center of Engineering for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Research Center of Engineering for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Research Center of Engineering for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-22
      • Revised Date: 2007-12-29
      • Published Date: 2008-06-05

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