Chin. J. Semicond. > 1995, Volume 16?>?Issue 12?> 897-900

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1995

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      牛智川，周增圻，林耀望，李朝勇. MBE生長輕摻Si高遷移率GaAs材料的雜質補償特性研究[J]. 半導體學報(英文版), 1995, 16(12): 897-900.
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      牛智川，周增圻，林耀望，李朝勇. MBE生長輕摻Si高遷移率GaAs材料的雜質補償特性研究[J]. 半導體學報(英文版), 1995, 16(12): 897-900.

      • Received Date: 2015-08-19

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