J. Semicond. > 2008, Volume 29?>?Issue 1?> 128-132

PAPERS

Growth of p-GaN on High-Temperature AlN Templates

Liu Ting, Zou Zeya, Wang Zhen, Zhao Hong, Zhao Wenbo, Luo Muchang, Zhou Xun, Yang Xiaobo and Liao Xiuying

+ Author Affiliations

PDF

Abstract: Uniformity-doping and Mg-gradual-δ-doping p-type GaN epilayers are grown on HT-AlN/sapphire templates by metalorganic chemical vapor deposition (MOCVD).Compared to those grown on GaN/sapphire templates,the Mg-gradual-δ-doping process and HT-AlN/sapphire template improve the crystal quality of p-type GaN epilayers and enhance the p-type performance.The double crystal X-ray rocking curve and the Hall measurement show a full-width at half-maximum of only 178" and the highest hole concentration of 5.78e17cm-3 for the Mg-gradual-δ-doping p-type GaN epilayers grown on HT-AlN/sapphire templates.Under the optimum ratio of Cp2Mg/TMGa,the hole concentration of the p-type GaN epilayer is improved to 8.03e17cm-3.

Key words: high-temperature lN, gradual-δ-doping, uniformity-doping, MOCVD, p-GaN

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3651 Times PDF downloads: 1444 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 14 August 2007 Online: Published: 01 January 2008

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Liu Ting, Zou Zeya, Wang Zhen, Zhao Hong, Zhao Wenbo, Luo Muchang, Zhou Xun, Yang Xiaobo, Liao Xiuying. Growth of p-GaN on High-Temperature AlN Templates[J]. Journal of Semiconductors, 2008, 29(1): 128-132. ****Liu T, Zou Z Y, Wang Z, Zhao H, Zhao W B, Luo M C, Zhou X, Yang X B, Liao X Y. Growth of p-GaN on High-Temperature AlN Templates[J]. J. Semicond., 2008, 29(1): 128.
      Citation:
      Liu Ting, Zou Zeya, Wang Zhen, Zhao Hong, Zhao Wenbo, Luo Muchang, Zhou Xun, Yang Xiaobo, Liao Xiuying. Growth of p-GaN on High-Temperature AlN Templates[J]. Journal of Semiconductors, 2008, 29(1): 128-132. ****
      Liu T, Zou Z Y, Wang Z, Zhao H, Zhao W B, Luo M C, Zhou X, Yang X B, Liao X Y. Growth of p-GaN on High-Temperature AlN Templates[J]. J. Semicond., 2008, 29(1): 128.

      Growth of p-GaN on High-Temperature AlN Templates

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-26
      • Revised Date: 2007-08-14
      • Published Date: 2007-12-26

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return