Chin. J. Semicond. > 2007, Volume 28?>?Issue 2?> 171-175

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Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Li Dongmei, Huangfu Liying, Gou Qiujing and Wang Zhihua

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Abstract: Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose (TID) radiation effects.The leakage current,threshold voltage shift,and transconductance of the devices are monitored before and after γ-ray irradiation.Different device bias conditions are used during irradiation.The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures.The impact of the layout on TID effects on pMOS devices is slight and can be neglected.

Key words: MOS transistor, layout, total ionizing dose, radiation effect

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    Received: 18 August 2015 Revised: 27 September 2006 Online: Published: 01 February 2007

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      Li Dongmei, Huangfu Liying, Gou Qiujing, Wang Zhihua. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Journal of Semiconductors, 2007, 28(2): 171-175. ****Li D M, Huang F L Y, Gou Q J, Wang Z H. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Chin. J. Semicond., 2007, 28(2): 171.
      Citation:
      Li Dongmei, Huangfu Liying, Gou Qiujing, Wang Zhihua. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Journal of Semiconductors, 2007, 28(2): 171-175. ****
      Li D M, Huang F L Y, Gou Q J, Wang Z H. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Chin. J. Semicond., 2007, 28(2): 171.

      Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

      • Department of Electronic Engineering,Tsinghua University,Beijing 100084,China

      • Department of Electronic Engineering,Tsinghua University,Beijing 100084,China

      • Department of Electronic Engineering,Tsinghua University,Beijing 100084,China

      • Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-22
      • Revised Date: 2006-09-27
      • Published Date: 2007-01-30

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