Abstract: A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed.The hetero-material gate,which consists of a main gate and two side-gates,is used to control the surface potential distribution.The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately.Compared to a common DG fully depleted SOI MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope.The on/off current ratio is about 1e10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.

Key words: hetero-material gate, on/off current ratio, sub-threshold slope, SOI FET