Chin. J. Semicond. > 2007, Volume 28?>?Issue 5?> 763-767

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A Novel BCD Structure with Semi-Insulation Bonding SOI

Tan Kaizhou, Yang Mohua, Xu Shiliu, Liu Yukui, Li Zhaoji, Liu Yong and Feng Jian

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Abstract: A novel BCD structure with semi-insulation bonding SOI is proposed.It reliably integrates a high voltage power device,CMOS,and BJT into a monolithic circuit.Integrated VDMOS lengthways is a unique feature of this structure.It is a useful technique in applications of automotive electronics,radiation hardening,and strong electromagnetic pulses (EMP).The breakdown voltage of this BCD structure VDMOS is 160V,its on-resistance is 0.3Ω,and its specific on-resistance is 26mΩ·cm2.The breakdown voltages of npn,pMOS,and nMOS are 50,35,and 30V,respectively,and the npn current gain and cut-off frequency are 120 and 700MHz,respectively.

Key words: BCD, semi-insulation SOI, VDMOS, power integrated circuit

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    History

    Received: 18 August 2015 Revised: 23 December 2006 Online: Published: 01 May 2007

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      Tan Kaizhou, Yang Mohua, Xu Shiliu, Liu Yukui, Li Zhaoji, Liu Yong, Feng Jian. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Journal of Semiconductors, 2007, 28(5): 763-767. ****Tan K Z, Yang M H, Xu S L, Liu Y K, Li Z J, Liu Y, Feng J. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Chin. J. Semicond., 2007, 28(5): 763.
      Citation:
      Tan Kaizhou, Yang Mohua, Xu Shiliu, Liu Yukui, Li Zhaoji, Liu Yong, Feng Jian. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Journal of Semiconductors, 2007, 28(5): 763-767. ****
      Tan K Z, Yang M H, Xu S L, Liu Y K, Li Z J, Liu Y, Feng J. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Chin. J. Semicond., 2007, 28(5): 763.

      A Novel BCD Structure with Semi-Insulation Bonding SOI

      • School of Microelectronics and Solid-State Electronics,University of ElectronicScience and Technology,Chengdu 610054,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • School of Microelectronics and Solid-State Electronics,University of ElectronicScience and Technology,Chengdu 610054,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • School of Microelectronics and Solid-State Electronics,University of ElectronicScience and Technology,Chengdu 610054,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-12
      • Revised Date: 2006-12-23
      • Published Date: 2007-04-29

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