Chin. J. Semicond. > 2007, Volume 28?>?Issue 6?> 878-882

PAPERS

Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN

Su Zhiguo, Xu Jintong, Chen Jun, Li Xiangyang, Liu Ji and Zhao Degang

+ Author Affiliations

PDF

Abstract: The persistent photoconductivity effect in unintentionally doped n-GaN grown by metal organic chemical vapor deposition (MOCVD) is presented.The photoconductivity build-up and its decay behavior with different excitation intensities and different wavelength ranges are observed.The experiment shows persistent photocurrent (PPC),negative photocurrent (NPC),and negative persistent photocurrent (NPPC) trends as the excitation intensity is changed from low to high when the excitation light includes wavelengths larger than the absorption edge of GaN.It is believed that the phenomenon is ruled by competition between capture and release photo-generated electrons and holes by deep electron traps and deep hole traps,respectively.

Key words: GaN, persistent photoconductivity, PPC, NPPC

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3938 Times PDF downloads: 1145 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 16 January 2007 Online: Published: 01 June 2007

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Su Zhiguo, Xu Jintong, Chen Jun, Li Xiangyang, Liu Ji, Zhao Degang. Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN[J]. Journal of Semiconductors, 2007, 28(6): 878-882. ****Su Z G, Xu J T, Chen J, Li X Y, Liu J, Zhao D G. Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN[J]. Chin. J. Semicond., 2007, 28(6): 878.
      Citation:
      Su Zhiguo, Xu Jintong, Chen Jun, Li Xiangyang, Liu Ji, Zhao Degang. Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN[J]. Journal of Semiconductors, 2007, 28(6): 878-882. ****
      Su Z G, Xu J T, Chen J, Li X Y, Liu J, Zhao D G. Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN[J]. Chin. J. Semicond., 2007, 28(6): 878.

      Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN

      • State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • School of Information Science and Engineering,Shandong University,Jinan 250100,China

      • State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • School of Information Science and Engineering,Shandong University,Jinan 250100,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-16
      • Revised Date: 2007-01-16
      • Published Date: 2007-05-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return