Abstract: The basis mechanism and main process flow of metal induced crystallization poly-Si (MIC poly-Si) dynamic gettering are discussed,and its applications are studied for use in poly-Si thin film transistor devices.In the research of MIC poly-Si and producing TFT with poly-Si as the active layer,we find that nickel residue is left in the MIC poly-Si thin film,and the amount of nickel is extremely high along the grain boundary.This can reduce the stability and reliability of the TFT as well as the whole system.In order to improve the performance of MIC thin films and devices,we use dynamic nickel gettering by phosphor-silicate glass (PSG) to absorb nickel effectively,reducing the residual nickel in the poly-Si,reducing the number of defects at the conflicting crystal boundaries,and decreasing the leakage current of the TFT.The simple process flow and low cost make it suitable for industrial manufacturing.This is a necessary step in the production of microelectronics devices and systems.

Key words: MIC poly-Si, PSG, dynamic Ni gettering, solid solubility