Abstract: The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET's is studied.We find that the generation current peak decreases as the stress time increases.We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias,lowering the maximal generation rate.The density of the effective trapped electrons affecting the effective drain bias is calculated with our model.

Key words: generation current, high gate voltage stress, trapped electron